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Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer
| Content Provider | Scilit |
|---|---|
| Author | Zhao, Fang Yao, Guang-Rui Song, Jing-Jing Ding, Bin-Bin Xiong, Jian-Yong Su, Chen Zheng, Shu-Wen Zhang, Tao Fan, Guang-Han |
| Copyright Year | 2013 |
| Description | Journal: Chinese Physics B The characteristics of a blue light-emitting diode (LED) with an AlInN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AlInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AlGaN EBL or a AlGaN/ GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-1056/22/5/058503/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/22/5/058503 |
| Journal | Chinese Physics B |
| Issue Number | 5 |
| Volume Number | 22 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2013-05-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Light Emitting Emitting Diodes Alinn/gan Superlattice Blue Light Electrostatic Fields Blocking Layer Alinn/gan Sl Electron Blocking |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
