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Epitaxial lateral overgrowth of GaN on molecular beam epitaxy GaN buffer layers on Si substrates by hydride vapour phase epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Gu, Shulin Zhang, Rong Shi, Yi Zheng, Youdou |
| Copyright Year | 2001 |
| Description | Journal: Journal of Physics D: Applied Physics Hydride vapour phase epitaxy GaN epitaxial lateral overgrowth (ELO) materials were grown on patterned molecular beam epitaxy GaN buffer layers on Si (111) substrates. The ELO process leads to an improvement in the structural properties of the GaN on Si. The impact of the growth conditions such as substrate temperature and $NH_{3}$ partial pressure (or flow rate) are reported for growth on these substrates. Continuous ELO materials have been obtained on a small period of ELO substrate with a high density of pits on the sample surface. The role of Si gas phase transport on the ELO materials is discussed. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/34/13/304/pdf |
| Ending Page | 1954 |
| Page Count | 4 |
| Starting Page | 1951 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/34/13/304 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 13 |
| Volume Number | 34 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2001-06-19 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Molecular Beam Epitaxy Lateral Overgrowth Epitaxial Lateral |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
