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The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition
| Content Provider | Scilit |
|---|---|
| Author | Hsu, Tzu-Yao Kuo, Chin-Lung Lin, Bo-Ting Shieh, Jay Chen, Miin-Jang |
| Copyright Year | 2019 |
| Description | Journal: Smart Materials and Structures The crystalline phases and ferroelectric properties of $Zr_{x}Hf_{1-x}O_{2}$ (ZHO) ultrathin films (5.6-5.8 nm in thickness) prepared by remote plasma atomic layer deposition (RP-ALD) before and after post-annealing and wake-up cycling have been investigated in this study. For the films with high $ZrO_{2}$ percentages, the plasma bombardment from RP-ALD was able to induce partial ferroelectric orthorhombic (o) crystallization during the film deposition stage. The as-deposited pure $ZrO_{2}$ ultrathin film exhibited a fully developed ferroelectric polarization hysteresis after wake-up cycling. For the films containing the ferroelectric o-phase in the as-deposited state, post-annealing the films followed by a wake-up cycling procedure could greatly promote ferroelectric switching while maintaining low leakage. The ferroelectric properties of the ZHO ultrathin films were highly dependent on the $ZrO_{2}-to-HfO_{2}$ ratio and could be tailored by various combinations of post-annealing and wake-up cycling. An increasing amount of $HfO_{2}$ has been found to be detrimental to the ferroelectricity, mainly due to the high crystallization temperature of $HfO_{2}$. For the post-annealed ZHO ultrathin films, the ferroelectricity was governed by the relative amounts of the ferroelectric o-phase and the non-ferroelectric monoclinic (m) phase. The $Zr_{0.5}H_{0.5}O_{2}$ ultrathin film was the only composition which exhibited a large, stable polarization hysteresis after post-annealing but before wake-up cycling. The annealed $Zr_{0.5}H_{0.5}O_{2}$ ultrathin film is believed to contain a suitable mix of o and m phases to produce loose grain boundaries, allowing the ferroelectric o-phase crystallites to switch freely under electrical loading. |
| Related Links | https://iopscience.iop.org/article/10.1088/1361-665X/ab23c3/pdf |
| ISSN | 09641726 |
| e-ISSN | 1361665X |
| DOI | 10.1088/1361-665x/ab23c3 |
| Journal | Smart Materials and Structures |
| Issue Number | 8 |
| Volume Number | 28 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2019-05-22 |
| Access Restriction | Open |
| Subject Keyword | Journal: Smart Materials and Structures Metallurgy and Metallurgical Engineering Post Annealing and Wake |
| Content Type | Text |
| Resource Type | Article |
| Subject | Signal Processing Atomic and Molecular Physics, and Optics Mechanics of Materials Condensed Matter Physics Materials Science Electrical and Electronic Engineering Civil and Structural Engineering |
