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Dependence of Spin-orbit Parameters in $Al_{x}Ga_{1−x}$N/GaN Quantum Wells on the Al Composition of the Barrier
| Content Provider | Scilit |
|---|---|
| Author | Li, Ming |
| Copyright Year | 2013 |
| Description | Journal: Communications in Theoretical Physics In this paper, we obtain considerable spin-orbit (SO) parameters in $Al_{x}Ga_{1−x}$N/GaN quantum wells (QWs) with sheet carrier concentration $N_{s}$ = 120 × $10^{11}/cm^{2}$. With increasing Al content (x) of the barrier, the SO parameters increase as a whole, and the two major contributions are found to be the decrease of the expansion region of the envelope functions and the increase of the polarized electric field in the well. Compared with the Rashba parameters for the first two subbands, the intersubband SO parameter is a bit smaller and varies more slowly with x. The results indicate the SO parameters, especially the Rashba parameters can be engineered by the Al composition of the barrier, which may be helpful to the spin manipulation of III-nitride low-dimensional heterostructures. |
| Related Links | http://iopscience.iop.org/article/10.1088/0253-6102/60/1/17/pdf |
| Ending Page | 123 |
| Page Count | 5 |
| Starting Page | 119 |
| ISSN | 02536102 |
| e-ISSN | 15729494 |
| DOI | 10.1088/0253-6102/60/1/17 |
| Journal | Communications in Theoretical Physics |
| Issue Number | 1 |
| Volume Number | 60 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2013-07-15 |
| Access Restriction | Open |
| Subject Keyword | Journal: Communications in Theoretical Physics Quantum Science and Technology Al Composition of the Barrier |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
