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Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications
| Content Provider | Scilit |
|---|---|
| Author | Govoreanu, Bogdan Degraeve, Robin Kauerauf, Thomas Magnus, Wim Wellekens, Dirk Groeseneken, Guido Houdt, Jan Van |
| Copyright Year | 2006 |
| Description | Journal: Japanese Journal of Applied Physics We propose the use of medium-κ dielectrics for direct tunneling floating gate memory devices, targeting embedded-random-access memory (e-RAM) applications. We found that SiON offers best performance if voltage reduction overrules refresh time, while Hf-silicates would be preferred if the refresh time is more critical. Our analysis is based on a direct tunneling current model, a response surface methodology and experimental data on small metal–oxide–semiconductor field-effect transistors (MOSFET's). The impact of dielectric degradation during cycling is studied for scalability towards the 32 nm node. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.45.3170/pdf |
| Ending Page | 3175 |
| Page Count | 6 |
| Starting Page | 3170 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.45.3170 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4B |
| Volume Number | 45 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2006-04-25 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Mechanical Engineering Direct Tunneling |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
