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Locally hydrazine doped $WSe_{2}$ p-n junction toward high-performance photodetectors
| Content Provider | Scilit |
|---|---|
| Author | Sun, Mengxing Xie, Dan Sun, Yilin Li, Weiwei Ren, Tian Ling |
| Copyright Year | 2017 |
| Description | Journal: Nanotechnology Two dimensional (2D) materials have shown great potential in the photodetection and other optoelectronic applications. Exploiting 2D materials to form p-n junctions enables effective generation and separation of carriers excited by light, thus creating high-performance optoelectronic devices. This paper demonstrates a lateral $WSe_{2}$ p-n junction through a locally hydrazine doping method. Good current-rectifying characteristics, including a high rectification ratio of $~10^{3}$, have been observed; this indicates that a high-quality p-n junction has been formed by chemical doping. Under light illumination, the device shows improved photoresponse capabilities with a responsivity of 30 mA $W^{−1}$, a detectivity of 6.18 × $10^{8}$ Jones, photocurrent/dark current ratio of $10^{3}$ and a response time of 2 ms. These results suggest an effective way to get a p-n junction and reveal the application potential of the device for next generation photodetectors. |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6528/aa96e9/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/aa96e9 |
| Journal | Nanotechnology |
| Issue Number | 1 |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-11-29 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
