NDLI: Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

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Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

Content Provider	Scilit
Author	Ding, Zi-Jun Wang, Yong-Ping Liu, Wen-Jun Ding, Shi-Jin Baklanov, Mikhail R. Zhang, David Wei
Copyright Year	2018
Description	Journal: Journal of Physics D: Applied Physics Ultralow dielectric-constant (k) SiOCH films were prepared from triethoxymethylsilane (MTES) and cinene (LIMO) by plasma-enhanced chemical vapor deposition (PECVD). By changing the mass flow rate ratio (MFRR) of LIMO/MTES, the properties of the low k films were investigated. In particular, the chemical composition and bonding structure of the deposited film were analyzed with the help of Fourier transforms infrared spectroscopy and X-ray photoelectron spectroscopy. It was revealed that the bonding configurations of O-Si-C3, O2-Si-C2, Si-C and C-C/C-H in the low-k film increased with increasing the MFRR of LIMO/MTES. Further, as the MFRR increased from 1.0 to 1.5, the k value decreased gradually to 2.3, and then increased again with a continuing increment of the MFRR. Such changes accorded with the evolvement of porosity within the film. In the case of our interested ultralow k film (k=2.3) with a maximum porosity of 29.1%, it exhibited a very low leakage current density of 3.35×10-9 A/cm2 at 1 MV/cm and 25 oC while maintaining good mechanical properties such as an Young's modulus of 4.26 GPa and a hardness of 0.41 GPa.
Related Links	http://iopscience.iop.org/article/10.1088/1361-6463/aaae79/pdf
ISSN	00223727
e-ISSN	13616463
DOI	10.1088/1361-6463/aaae79
Journal	Journal of Physics D: Applied Physics
Issue Number	11
Volume Number	51
Language	English
Publisher	IOP Publishing
Publisher Date	2018-02-12
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics D: Applied Physics Triethoxymethylsilane
Content Type	Text
Resource Type	Article
Subject	Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials

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