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Low-frequency impurity conduction in lightly doped n-type GaAs
| Content Provider | Scilit |
|---|---|
| Author | Kahlert, H. |
| Copyright Year | 1976 |
| Description | Journal: Journal of Physics C: Solid State Physics The real part of the AC conductivity has been measured in epitaxial layers of n-type GaAs in the frequency range $1-10^{3}$ Hz at 4.2K, where the DC conductivity is dominated by phonon-assisted hopping between impurities. These measurements cover the transition region from DC behaviour to an omega$ ^{S}$ dependence, where s approximately 0.6, and are compared with a recent theory of the frequency-dependent impurity conduction by Scher and Lax (1973) based on a stochastic interpretation of transport in a disordered solid. The theory predicts a DC limit of the conductivity which is about four orders of magnitude lower than the experimental values. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3719/9/3/016/pdf |
| Ending Page | 496 |
| Page Count | 6 |
| Starting Page | 491 |
| ISSN | 00223719 |
| DOI | 10.1088/0022-3719/9/3/016 |
| Journal | Journal of Physics C: Solid State Physics |
| Issue Number | 3 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1976-02-05 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics C: Solid State Physics Condensed Matter Physics Frequency Impurity Impurity Conduction Type Gaas Lightly Doped Ac Conductivity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Condensed Matter Physics Engineering |
