Loading...
Please wait, while we are loading the content...
Similar Documents
Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography
| Content Provider | Scilit |
|---|---|
| Author | Hironaka, Katsuya Hironaka Katsuya Aoki, Nobuyuki Aoki Nobuyuki Hori, Hidenobu Hori Hidenobu Yamada, Syoji Yamada Syoji |
| Copyright Year | 1997 |
| Description | Journal: Japanese Journal of Applied Physics Recently scanning tunneling microscopes (STMs) have become important tools for nanometer scale fabrication. In order to make a nanoscale structure on a semiconductor surface, we attempted to lithograph very fine lines (possibly less than 10 nm) by using a resist process with an STM as an electron beam source. A diluted positive electron beam resist, poly-methyl methacrylate (PMMA), was first coated on a S-doped GaAs substrate. Using the STM in air, we approached a W-tip to the surface at a bias voltage of 10 V and a tunneling current of 0.5 nA, and made a line using by scanning the tip with various scan times. We then analyzed those lines made by the STM tip using an atomic force microscope (AFM) in air. After these processes, we deposited a Ti membrane on the sample surface by vacuum evaporation, then lifted it off. As a result, we confirmed that it was possible to make fine Ti lines as narrow as 50 nm by this process. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.36.3839/pdf |
| Ending Page | 3843 |
| Page Count | 5 |
| Starting Page | 3839 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.36.3839 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 6S |
| Volume Number | 36 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Scanning Tunneling Microscope |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
