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Enhanced electrical property of Ni-doped $CoO_{x}$ hole transport layer for inverted perovskite solar cells
| Content Provider | Scilit |
|---|---|
| Author | Huang, Aibin Lei, Lei Yu, Yu Liu, Yan Yang, Songwang Bao, Shanhu Cao, Xun Jin, Ping |
| Copyright Year | 2017 |
| Description | Journal: Nanotechnology Ultrathin Ni doped $CoO_{x}$ films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of $CoO_{x}$ to match the that of $CH_{3}NH_{3}PbI_{3}$, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability. |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6528/aa6707/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/aa6707 |
| Journal | Nanotechnology |
| Issue Number | 20 |
| Volume Number | 28 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-04-24 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology Perovskite Solar Inverted Perovskite |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
