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Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si
| Content Provider | Scilit |
|---|---|
| Author | Yan, Zhao Han, Yu Lau, Kei May |
| Copyright Year | 2020 |
| Description | Journal: Nanotechnology We report on multi-stacked InAs/GaSb nano-ridges directly grown on (001) patterned Si substrates by metal-organic chemical vapor deposition (MOCVD). Uniform GaSb and InAs nano-ridges were demonstrated with optimized growth parameters. By adjusting the switching sequences, we also obtained defect-free InAs/GaSb and GaSb/InAs interfaces. Based on these fine-tuned growth conditions, multi-stacked InAs/GaSb nano-ridges were developed and characterized. The nano-ridges showed uniform morphology from scanning electron microscopy (SEM), and no observable crystalline defects were detected at the hetero-interfaces by transmission electron microscopy (TEM). These InAs/GaSb nano-ridges show great potential for applications in nano-scale tunneling devices and long wavelength light emitters and detectors. The demonstrated growth techniques provide helpful insights for the growth process control of 6.1 Å family compound semiconductors directly on Si by MOCVD. |
| Related Links | https://iopscience.iop.org/article/10.1088/1361-6528/ab91f2/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/ab91f2 |
| Journal | Nanotechnology |
| Issue Number | 34 |
| Volume Number | 31 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2020-05-11 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology 6.1 Å Family Compound Semiconductor Inas/gasb Nano-ridges Aspect Ratio Trapping Metal-organic Chemical Vapor Deposition Selective Area Epitaxy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |