Direct Crystallization and Characterization of Bi3TiTaO9Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Content Provider	Scilit
Author	Suzuki, Muneyasu Nagata, Hajime Nukaga, Norimasa Watanabe, Takayuki Funakubo, Hiroshi Takenaka, Tadashi
Copyright Year	2002
Description	Journal: Japanese Journal of Applied Physics $Bi_{3}TiTaO_{9}$ (BTT) thin films were prepared on $(111)Pt/Ti/SiO_{2}$/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase $SrBi_{2}Ta_{2}O_{9}$ (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, $ε_{r}$, and loss tangent, tan δ, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280 kV/cm.
Related Links	http://iopscience.iop.org/article/10.1143/JJAP.41.6825/pdf
Ending Page	6828
Page Count	4
Starting Page	6825
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.41.6825
Journal	Japanese Journal of Applied Physics
Issue Number	Part 1, No
Volume Number	41
Language	English
Publisher	IOP Publishing
Publisher Date	2002-11-30
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Cultural Studies Thin Film Deposition Dielectric Constant Electron Cyclotron Resonance Thin Film Leakage Current Space Mapping X Ray Diffraction
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering