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Ion chamber response and $A_{wall}$correction factors in $a^{60}$Co beam by Monte Carlo simulation

Content Provider	Scilit
Author	Rogers, D. W. O. Bielajew, A. F. Nahum, A. E.
Copyright Year	1985
Description	Journal: Physics in Medicine & Biology The responses and wall correction factors for ion chambers in broad parallel$ ^{60}$Co beams have been calculated using Monte Carlo techniques. The calculated responses are in good agreement with Bragg-Gray cavity theory. In particular, the response divided by the wall correction factor $A_{wall}$ is found to be independent of the detector's shape but dependent on the material used for the chamber wall in a manner predicted by Bragg-Gray cavity theory. A simple theory is given which predicts the increase in response of a Farmer ion chamber due to an electrode of an arbitrary material and radius. The change in chamber response as a function of build-up cap composition is in good agreement with analytic expressions. The effect of guard regions in pancake chambers is found to be negligible. Embedding a pancake chamber in a flat phantom during calibration is shown to increase the response by 1.0+or-0.2%. Calculated values of $A_{wall}$ are in good agreement with most experimental results and with those given in the AAPM protocol but with a considerably lower uncertainty of +or-0.2%. When using these values with the AAPM protocol, the beta$ _{cep}$ factor should not be used since it is included in these calculated values.
Related Links	http://iopscience.iop.org/article/10.1088/0031-9155/30/5/006/pdf
Ending Page	443
Page Count	15
Starting Page	429
ISSN	00319155
e-ISSN	13616560
DOI	10.1088/0031-9155/30/5/006
Journal	Physics in Medicine & Biology
Issue Number	5
Volume Number	30
Language	English
Publisher	IOP Publishing
Publisher Date	1985-05-01
Access Restriction	Open
Subject Keyword	Journal: Physics in Medicine & Biology Monte Carlo Technique Monte Carlo Simulation
Content Type	Text
Resource Type	Article
Subject	Radiology, Nuclear Medicine and Imaging Radiological and Ultrasound Technology

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