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The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy
| Content Provider | Scilit |
|---|---|
| Author | Wan, Xiao-Jia Wang, Xiao-Liang Xiao, Hong-Ling Wang, Cui-Mei Feng, Chun Deng, Qing-Wen Qu, Shen-Qi Zhang, Jing-Wen Hou, Xun Cai, Shu-Jun Feng, Zhi-Hong |
| Copyright Year | 2013 |
| Description | Journal: Chinese Physics Letters The valence band offset (VBO) of an $Al_{0.17}Ga_{0.83}$N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ~0.22 eV is obtained. The results indicate that the $Al_{0.17}Ga_{0.83}$N/GaN heterojunction exhibits a type-I band alignment. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/30/5/057101/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/30/5/057101 |
| Journal | Chinese Physics Letters |
| Issue Number | 5 |
| Volume Number | 30 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2013-05-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Heterojunction Determined N/gan Heterojunction |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |