NDLI: Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride

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Precise radiative lifetimes in bulk crystals from first principles: the case of wurtzite gallium nitride

Content Provider	Scilit
Author	Jhalani, Vatsal A. Chen, Hsiao-Yi Palummo, Maurizia Bernardi, Marco
Copyright Year	2019
Description	Journal: Journal of Physics: Condensed Matter Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe-Salpeter equation) and spin-orbit coupling to include the exciton fine structure is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.
Related Links	https://iopscience.iop.org/article/10.1088/1361-648X/ab5563/pdf
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/1361-648x/ab5563
Journal	Journal of Physics: Condensed Matter
Issue Number	8
Volume Number	32
Language	English
Publisher	IOP Publishing
Publisher Date	2019-11-07
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Applied Physics Radiative Lifetimes Nitride Gallium
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science

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