NDLI: Heterostructure field effect transistors based on nitride interfaces

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Heterostructure field effect transistors based on nitride interfaces

Content Provider	Scilit
Author	Majewski, J. A. Zandler, G. Vogl, P.
Copyright Year	2002
Description	Journal: Journal of Physics: Condensed Matter A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructure, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. Our studies reveal that the nitride based electronic devices have characteristics that predispose them for high power and high frequency applications. We demonstrate also that transistor characteristics are favourably influenced by the internal polarization induced electric fields.
Related Links	http://iopscience.iop.org/article/10.1088/0953-8984/14/13/309/pdf
Ending Page	3522
Page Count	12
Starting Page	3511
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/0953-8984/14/13/309
Journal	Journal of Physics: Condensed Matter
Issue Number	13
Volume Number	14
Language	English
Publisher	IOP Publishing
Publisher Date	2002-03-22
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Metallurgy and Metallurgical Engineering Applied Physics Electric Field Field Effect Transistor Monte Carlo Simulation High Frequency
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science

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