Charge confinements in CdSe–ZnSe symmetric double quantum wells

Content Provider	Scilit
Author	Tit, Nacir Obaidat, Ihab M.
Copyright Year	2008
Description	Journal: Journal of Physics: Condensed Matter The bound states in the (CdSe)Nw(ZnSe)Nb(CdSe)Nw–ZnSe(001) symmetric double quantum wells are investigated versus the well width (Nw) and the barrier thickness (Nb). A calculation based on the sp3s* tight-binding method which includes the spin–orbit interactions is employed to calculate the bandgap energy, quantum-confinement energy, and band structures. The studied systems possess a vanishing valence-band offset (VBO = 0) in consistency with the well known common-anion rule, and a large conduction-band offset ( eV), which plays an essential role in the confinement of electrons within the CdSe wells. The biaxial strain, on the other hand, plays another role in confining the holes at the interfaces (within the well regions) and thus enhancing the radiative efficiency. The induced-strain energy is estimated to be ~35 meV. More importantly, the results show that, for a fixed barrier thickness, the double wells are able to confine a pair of bound states when they are very thin. By increasing the wells' width (Nw), further, a new pair of states from the conduction-band continuum falls into the wells every time Nw hits a multiple of four monolayers (more specifically, for 4n
Related Links	http://iopscience.iop.org/0953-8984/20/16/165205/pdf/0953-8984_20_16_165205.pdf
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/0953-8984/20/16/165205
Journal	Journal of Physics: Condensed Matter
Issue Number	16
Volume Number	20
Language	English
Publisher	IOP Publishing
Publisher Date	2008-03-31
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Condensed Matter Physics Barrier Thickness Photoluminescence
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science