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Picosecond saturable absorption measurements on thin film single-crystal InAs layers grown by MBE
| Content Provider | Scilit |
|---|---|
| Author | Phillips, C. C. Li, Y. B. Stradling, R. A. Vodopyanov, K. L. |
| Copyright Year | 1991 |
| Description | Journal: Journal of Physics D: Applied Physics The linear and nonlinear optical properties of high-quality single-crystal thin (3.3 mu m) MBE films of InAs on GaAs substrates are studied using the lambda =2.94 mu m output of a mode-locked $Er^{3+}$ laser. The onset of absorption saturation occurs at pulse energy densities of approximately=100 mu J $cm^{-2}$, and a dynamic Moss-Burstein effect model gives a good quantitative explanation of the experimental data. Very rapid adsorption recovery times ( approximately=150 ps) suggest that interfacial recombination is the dominant relaxation mechanism, and indicate the potential for the use of these novel semiconductor heterostructures as fast passive optical shutters for mode-locking and Q-switching applications in the mid-infrared. |
| Related Links | http://iopscience.iop.org/article/10.1088/0022-3727/24/3/030/pdf |
| Ending Page | 440 |
| Page Count | 4 |
| Starting Page | 437 |
| ISSN | 00223727 |
| e-ISSN | 13616463 |
| DOI | 10.1088/0022-3727/24/3/030 |
| Journal | Journal of Physics D: Applied Physics |
| Issue Number | 3 |
| Volume Number | 24 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1991-03-14 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics D: Applied Physics Nonlinear Optics Single Crystal Thin Film |
| Content Type | Text |
| Resource Type | Article |
| Subject | Surfaces, Coatings and Films Acoustics and Ultrasonics Condensed Matter Physics Electronic, Optical and Magnetic Materials |
