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Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
| Content Provider | Scilit |
|---|---|
| Author | Xi, Xiao-Wen Chai, Chang-Chun Zhao, Gang Yang, Yin-Tang Yu, Xin-Hai Liu, Yang |
| Copyright Year | 2016 |
| Description | Journal: Chinese Physics B The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-1056/25/4/048503/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/25/4/048503 |
| Journal | Chinese Physics B |
| Issue Number | 4 |
| Volume Number | 25 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Applied Physics Electron Mobility Pseudomorphic High Gaas Pseudomorphic Damage Effect Mobility Transistor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
