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Mapping of 2-D dopant distribution using electron holography
| Content Provider | Scilit |
|---|---|
| Author | Twitchett, A. C. Midgley, P. A. |
| Copyright Year | 2018 |
| Description | Off-axis electron holography has been used to examine the electrostatic potential in Si and SiC semiconductor devices. Charging of the SiC sample was observed, and a simple model for the charge distribution was developed to examine the effect on the observed dopant contrast. Other experimental difficulties encountered when examining semiconductor samples using electron holography are also discussed, including 'curtaining', prevalent in samples prepared by FIB, and diffraction contrast. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-6&type=chapterpdf |
| Ending Page | 32 |
| Page Count | 4 |
| Starting Page | 29 |
| DOI | 10.1201/9781351074629-6 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Atmospheric Sciences Using Electron Holography Dopant Charging Experimental |
| Content Type | Text |
| Resource Type | Chapter |
