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Structural and analytical studies of GaAs and GaP layers grown on silicon
| Content Provider | Scilit |
|---|---|
| Author | Al-Jassim, M. M. Blakeslee, A. E. Jones, K. M. Asher, S. E. |
| Copyright Year | 2021 |
| Description | The nucleation, annealing and growth of GaAs and GaP layers on Si substrates have been studied. The morphology of these heteroepitaxial layers was examined by SEM while their structural quality was evaluated by conventional and high resolution TEM. SIMS was used to study the cleanliness of the Si/III-V interface and how that affects the epitaxial growth. The mode of growth and defect structure of the GaP layers were found to depend primarily on the quality of the interface. On the other hand, the defect density in the GaAs layers was dictated by the mismatch and the growth conditions. |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| DOI | 10.1201/9781003069621-16 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-31 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Crystallography Structural Gap Layers Annealing Heteroepitaxial Si/iii Morphology |
| Content Type | Text |
| Resource Type | Chapter |
