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High spatial resolution EDX microanalysis of III–V semiconducting materials
| Content Provider | Scilit |
|---|---|
| Author | Bullock, J. F. Humphreys, C. J. Norman, A. G. Titchmarsh, J. M. |
| Copyright Year | 2021 |
| Description | III–V semiconductor alloy layers grown by MOCVD and MBE can exhibit nanometre scale fluctuations in composition along the growth direction. Such fluctuations about the intended composition are observed by CTEM, but their quantification is difficult. High spatial resolution EDX microanalysis with a field emission gun STEM enables quantification of these composition changes. In $Ga_{1–x}$. $In_{x}$ As these can be about 20% in x. One problem which may hinder microanalysis in a FEG STEM is that of beam damage. In the case of InP, holes can be made in the specimen. |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 648 |
| Page Count | 6 |
| Starting Page | 643 |
| DOI | 10.1201/9781003069621-101 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Characterization and Testing of Materials Microscopic Research Quantification Resolution Microanalysis Fluctuations Hinder |
| Content Type | Text |
| Resource Type | Chapter |
