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Memory Devices
| Content Provider | Scilit |
|---|---|
| Author | Dorf, Richard C. |
| Copyright Year | 2018 |
| Description | Outwardly, DRAMs and SRAMs differ little, except in their relative density and performance. But internally, DRAMs are distinguished from SRAMs, in that no bi-stable electronic circuit maintains the information. Instead, DRAM information is stored ''dynamically'' as charge on a capacitor. Modern designs feature one field-effect transistor (FET) to access the information for both reading and writing and a thin film capacitor to store information. SRAMs maintain their bi-stability, as long as power is applied, through a cross-coupled pair of inverters within each storage cell. Almost always, two additional transistors access the internal nodes for reading and writing. Most modern cell designs are CMOS, with two P-channel and four N-channel FETs. Book Name: The Electrical Engineering Handbook - Six Volume Set |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2014-0-31463-4&isbn=9781315219677&doi=10.1201/9781315219677-114&format=pdf |
| Ending Page | 3169 |
| Page Count | 31 |
| Starting Page | 3139 |
| DOI | 10.1201/9781315219677-114 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-12-14 |
| Access Restriction | Open |
| Subject Keyword | Book Name: The Electrical Engineering Handbook - Six Volume Set Hardware and Architecturee Bi Stability Store Information |
| Content Type | Text |
| Resource Type | Chapter |
