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TEM investigations of oxidation phenomena in (Al,Ga)As/AlAs
| Content Provider | Scilit |
|---|---|
| Author | Schneider, R. Klein, A. Zorn, M. Weyers, M. Neumann, W. |
| Copyright Year | 2018 |
| Description | Oxidation phenomena of $Al_{x}Ga_{l+x}$As/AlAs multilayers were studied in detail on vertical-cavity surface-emitting laser diodes grown by metal-organic vapour phase epitaxy on (001)GaAs. The topography of cross-section samples prepared for transmission electron microscopy (TEM) was investigated by atomic force microscopy, whereas high-resolution and analytical TEM were used to characterize their microstructure and microchemistry. It is shown that sputtering of Si onto the specimen surfaces helps to protect (Al,Ga)As/AlAs layers from oxidation. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-105&type=chapterpdf |
| Ending Page | 492 |
| Page Count | 4 |
| Starting Page | 489 |
| DOI | 10.1201/9781351074629-105 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Legal Medicine Atmospheric Sciences Phenomena Microchemistry Xas/alas Diodes |
| Content Type | Text |
| Resource Type | Chapter |