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G1.1 Band anticrossing in highly mismatched semiconductor alloys
| Content Provider | Scilit |
|---|---|
| Author | Davies, J. H Long, A. R |
| Copyright Year | 2003 |
| Description | The first attempts to explain the large effects observed in HMAs were based on a dielectric model that predicted highly nonlinear composition dependencies of the band gap for the alloys of semiconductor compounds with very different properties [9]. The model predicted a semiconductor to semi-metal transition in some of the alloys [9,10]. Later, several other theoretical explanations of the large band gap reduction in III-V-N alloys have been also proposed [11-16]. An extensive review of theoretical, experimental and applied aspects of group III-V-N alloys can be found in a series of recently published articles [17]. Book Name: Physics of Semiconductors 2002 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-14001-2&isbn=9780429174957&doi=10.1201/9781482269055-18&format=pdf |
| Ending Page | 132 |
| Page Count | 8 |
| Starting Page | 125 |
| DOI | 10.1201/9781482269055-18 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2003-05-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Physics of Semiconductors 2002 Condensed Matter Physics Semiconductor Nonlinear Attempts Experimental Dielectric Explanations Mismatched |
| Content Type | Text |
| Resource Type | Chapter |
