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Silicon carbide precipitation at dislocations in noncrystalline silicon with high carbon content
| Content Provider | Scilit |
|---|---|
| Author | Gottschalk, H. |
| Copyright Year | 2021 |
| Description | In polycrystalline RAFT silicon ribbons all dislocations lying within the grains are decorated by chains of densely packed precipitates after annealing (1000°C, 2h). If the TEM-foils are chemically thinned, numerous curled ribbons emanating from the decorated dislocations appear on the surfaces. Obviously these ribbons are formed of precipitates insoluble in the etchant It is stated by electron diffraction that the extracted precipitates are β -SiC particles. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 478 |
| Page Count | 4 |
| Starting Page | 475 |
| DOI | 10.1201/9781003069621-76 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Silicon Annealing Dislocations Polycrystalline Curled Etchant Packed |
| Content Type | Text |
| Resource Type | Chapter |
