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Vacancies in Si and Ge
| Content Provider | Scilit |
|---|---|
| Author | Kissinger, Gudrun Pizzini, Sergio |
| Copyright Year | 2014 |
| Description | In this chapter, an overview is provided on recent progress in understanding the properties and impact of vacancies in silicon and germanium. Vacancies play an important role in a wide variety of defect formation processes in silicon and germanium, such as single crystal growth from a melt, wafer properties engineering, interstitial oxygen precipitate nucleation and growth, and dopant activation and diffusion. Book Name: Silicon, Germanium, and Their Alloys |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2012-0-14755-3&isbn=9780429102615&doi=10.1201/b17868-9&format=pdf |
| Ending Page | 173 |
| Page Count | 40 |
| Starting Page | 134 |
| DOI | 10.1201/b17868-9 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2014-12-09 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Silicon, Germanium, and Their Alloys Crystallography Crystal Oxygen Vacancies Defect Dopant Interstitial |
| Content Type | Text |
| Resource Type | Chapter |