NDLI: Prediction of low-LET ion induced single event upset cross sections for advanced SRAM

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Prediction of low-LET ion induced single event upset cross sections for advanced SRAM

Content Provider	Scilit
Author	Zhou, Wanting Hu, Jianhao Li, Lei
Copyright Year	2013
Description	This paper describes a simple circuit-level simulation-based approach to predict single event upset cross section induced by low-linear energy transfer (LET) ions for advanced bulk static random access memory (SRAM). A basic Simulation Program with Integrated Circuit Emphasis (SPICE) model with effective collection depth considered is developed for performing single event analysis quickly and efficiently. Through this circuit-level simulation model, radiation effects can be shown as the SPICE-simulated curve of LETs versus the corresponding affected distances, which are used for upset cross-section prediction. Furthermore, a fine-grain geometric model for cross-section prediction with fine sensitivity coefficient considered is utilized in the prediction. The calculated results based on this method are in good agreement with experimentally measured results reported for six-transistor SRAM fabricated in 90 nm and 65 nm process technologies.
Related Links	http://www.tandfonline.com/doi/pdf/10.1080/00223131.2013.821959?needAccess=true
Ending Page	987
Page Count	9
Starting Page	979
ISSN	00223131
e-ISSN	18811248
DOI	10.1080/00223131.2013.821959
Journal	Journal of Nuclear Science and Technology
Issue Number	10
Volume Number	50
Language	English
Publisher	Informa UK Limited
Publisher Date	2013-08-02
Access Restriction	Open
Subject Keyword	Nuclear Energy and Engineering Cross Section
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Nuclear Energy and Engineering

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