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Germanium on Silicon: Epitaxy and Applications
| Content Provider | Scilit |
|---|---|
| Author | Kissinger, Gudrun Pizzini, Sergio |
| Copyright Year | 2014 |
| Description | Germanium is attracting increasing interest due to the similarity of its band structure to III-V semiconductors, and its compatibility with Si-based microelectronics. High p-type electrical mobility in strained Ge channels has been demonstrated, but recent results also demonstrate the possible optoelectronic applications for both thinstrained Ge quantum wells (QWs) and thick bulk-like Ge layers (Chaisakul et al. 2014b; Rouifed et al. 2014; Camacho-Aguilera et al. 2012). Book Name: Silicon, Germanium, and Their Alloys |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2012-0-14755-3&isbn=9780429102615&doi=10.1201/b17868-7&format=pdf |
| DOI | 10.1201/b17868-7 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2014-12-09 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Silicon, Germanium, and Their Alloys Quantum Science and Technology Structure Mobility Germanium Camacho Aguilera |
| Content Type | Text |
| Resource Type | Chapter |