Loading...
Please wait, while we are loading the content...
EBIC studies on fluorinated grain boundaries and dislocations
| Content Provider | Scilit |
|---|---|
| Author | Kuper, F. G. Hosson, J. Th M. De Verwey, J. F. |
| Copyright Year | 2021 |
| Description | Using the EBIC method the effects of fluorine on the electrical properties of grain boundaries and stacking faults in silicon are studied. A new device is made with which EBIC images of grain boundaries in as-grown SOI layers can be obtained. Implantation of fluorine in the layer causes an enhanced contrast of these boundaries. In addition, EBIC studies on stacking faults reveal that no enhancement of the EBIC contrast is found, and electrical measurements indicate that passivation did occur. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 720 |
| Page Count | 6 |
| Starting Page | 715 |
| DOI | 10.1201/9781003069621-112 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Fluorine Grain Boundaries Dislocations Implantation Electrical Ebic Studies |
| Content Type | Text |
| Resource Type | Chapter |
