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Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy
| Content Provider | Scilit |
|---|---|
| Author | Gutiérrez, M. Herrera, M. Ross, I. González, D. Hopkinson, M. García, R. |
| Copyright Year | 2018 |
| Description | The growth of InGaAs quantum wells containing relatively small amounts of Nitrogen (typically <<5%) has emerged as an important technology for the potential achievement of optical emission and detection at the telecommunications wavelengths of 1.3 and 1.55 Jlm using GaAs substrates. Despite this interest there have been relatively few structural investigations on this material system, such as investigations of the critical layer thickness or the effect of the strong local distortion of the lattice due to the incorporation of Nitrogen. A series of $In_{x}Ga_{1-x}As_{1-y}N_{y}$/GaNAs multi-quantum well samples, grown by molecular beam epitaxy, has been characterised. For Nitrogen content y≤0.17, no dislocations were observed, however for higher Nitrogen content dislocations were observed for In contents x≥0.35. With increasing Nitrogen content, increasingly strong compositional modulation is observed in the wells. Moreover, we have observed that, in the wells, the bottom interface is sharper than the top interface. Book Name: Microscopy of Semiconducting Materials 2003 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2017-0-66874-9&isbn=9781351074636&doi=10.1201/9781351074636-33&format=pdf |
| Ending Page | 146 |
| Page Count | 4 |
| Starting Page | 143 |
| DOI | 10.1201/9781351074636-33 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-10 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2003 Microscopic Research Quantum Wells Structural Ingaas Nitrogen Content Multi Quantum Dislocations Were Observed |
| Content Type | Text |
| Resource Type | Chapter |
