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Fabrication of self-organized GalnNAs quantum dots on GaAs (311)B by atomic hydrogen-assisted RF- molecular beam epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Woo, J. C. Hasegawa, H. Kwon, Y. S. Yao, T. Yoo, K. H. |
| Copyright Year | 2005 |
| Description | On the other, GalnNAs/GaAs systems has been a popular research candidate in order to develop long wavelength lasers, which has a strongly sublinear bandgap energy dependence between GaAs and GaN with a much larger alloy bandgap bowing parameter than for any other ternary semiconductors. Moreover, addition of nitrogen mainly increases the conduction band offset, which in turn improves the high temperature performance of semiconductor lasers [4]. Several groups have reported the growth of GalnNAs QDs by different epitaxial methods and demonstrated PL emission at 1.3 ~ 1.5pm range [5-7]. Book Name: Compound Semiconductors 2004 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-18739-X&isbn=9780429177101&doi=10.1201/9781482269222-48&format=pdf |
| Ending Page | 218 |
| Page Count | 4 |
| Starting Page | 215 |
| DOI | 10.1201/9781482269222-48 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2005-04-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Compound Semiconductors 2004 Applied Physics Epitaxial Nitrogen Semiconductor Lasers Strongly Sublinear Galnnas Quantum Sublinear Bandgap |
| Content Type | Text |
| Resource Type | Chapter |