NDLI: Spin-Transfer-Torque MRAM

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Spin-Transfer-Torque MRAM

Content Provider	Scilit
Author	Lee, Kangho
Copyright Year	2017
Description	As silicon industry is moving toward the end of technology roadmap, providing cost-effective and power-efficient system-on-chip memory solutions has become ever more challenging. While there are increasing demands for embedded memory capacity, conventional embedded working memories such as embedded SRAM and DRAM have been facing scalability challenges along with increasing static leakage power. The static leakage power consumption of embedded working memories, particularly in case of high-performance mobile chips, accounts for a substantial portion of total power consumption, which is expected to exacerbate at future technology nodes. Considering that embedded memory occupies more than 50% of the total chip area of commercial state-of-the-art mobile chipsets, it is important to develop an alternative embedded memory technology that can improve energy efficiency and reduce cost without compromising the benefits of conventional working memories. Book Name: Nanoscale Semiconductor Memories
Related Links	https://content.taylorfrancis.com/books/download?dac=C2012-0-02455-1&isbn=9781315216195&doi=10.1201/b16236-8&format=pdf
Ending Page	227
Page Count	25
Starting Page	203
DOI	10.1201/b16236-8
Language	English
Publisher	Informa UK Limited
Publisher Date	2017-07-28
Access Restriction	Open
Subject Keyword	Book Name: Nanoscale Semiconductor Memories Hardware and Architecturee Energy Efficiency Leakage Consumption Embedded Memory Static Working Memories
Content Type	Text
Resource Type	Chapter

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