Loading...
Please wait, while we are loading the content...
Similar Documents
The fine structure of dislocations in silicon
| Content Provider | Scilit |
|---|---|
| Author | Gottschalk, H. Alexander, H. Dietz, V. |
| Copyright Year | 2021 |
| Description | For high stress deformed specimens containing dislocations in a nonequilibrium dissociation state the relaxation of the splitting width by annealing at very low temperatures (100°C to 140°C) is investigated by TEM measurements. As the formation of new double kinks is prevented by the low temperature, the motion of the partials is a result of the motion of existing kinks. Assuming the kink migration energy being equal for the 30° and for the 90° partial its value is found between 1 and 1.2 eV. Additional TEM observations of relaxation phenomena changing the dislocation arrangement at higher annealing temperatures are reported. Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 347 |
| Page Count | 9 |
| Starting Page | 339 |
| DOI | 10.1201/9781003069621-55 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Stress Migration Structure Dislocations Relaxation Splitting Width Double Phenomena Nonequilibrium |
| Content Type | Text |
| Resource Type | Chapter |
