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High resolution transmission electron microscope investigation of solid state amorphization in metal-Si systems
| Content Provider | Scilit |
|---|---|
| Author | Chen, L. J. Cheng, S. L. |
| Copyright Year | 2018 |
| Description | High resolution transmission electron microscopy (HRTEM) has been fruitfully applied to investigate the solid-state amorphization in metal/Si systems. The present review highlights the achievements of HRTEM in the investigation of amorphous interlayers in metal/Si systems, including growth kinetics, simultaneous presence of multiphases in the initial stage of metal/Si interaction and structures of amorphous interlayers. The analytical technique has also been applied to elucidate mechanisms of roughening of the epitaxial rare-earth silicide/(001)Si interface and formation of stacking faults in rare-earth silicides. The enhanced formation of technologically important $C54-TiSi_{2}$ by high temperature sputtering, a thin interposing Mo layer and tensile stress can all be explained involving the structures of the amorphous interlayers. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-95&type=chapterpdf |
| Ending Page | 448 |
| Page Count | 6 |
| Starting Page | 443 |
| DOI | 10.1201/9781351074629-95 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Atmospheric Sciences Structures Amorphous Resolution Silicides Hrtem Solid Stress Interlayers Metal/si |
| Content Type | Text |
| Resource Type | Chapter |
