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Ultra-high speed internal RF-gain InGaAs/InAlAs avalanche photodetector
| Content Provider | Scilit |
|---|---|
| Author | Woo, J. C. Hasegawa, H. Kwon, Y. S. Yao, T. Yoo, K. H. |
| Copyright Year | 2005 |
| Description | Gyungock Kim, Ki Joong Lee, and In Gyoo Kim Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Kajung-dong, Yusong-gu, Taejon 305-350, Korea We present a resonant-cavity type internal RF-gain InGaAs/InAlAs avalanche photodetector, which shows 40 Gbps high speed performance at high DC-gains. The bistability in the frequency response is measured at the onset voltage of the internal RF-gain near the avalanche region. The on-wafer measurement of a device shows 3 dBbandwidth over 36 GHz at gain > 10, resulting 360 GHz of GB product. The on-chip 40 Gbps NRZ operation shows clear eye openings with -80 mV peak-to-peak voltage at high DC-gains over 10. Book Name: Compound Semiconductors 2004 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-18739-X&isbn=9780429177101&doi=10.1201/9781482269222-25&format=pdf |
| Ending Page | 108 |
| Page Count | 4 |
| Starting Page | 105 |
| DOI | 10.1201/9781482269222-25 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2005-04-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Compound Semiconductors 2004 Optics Avalanche Voltage Ghz Ingaas/inalas Kim Internal Rf Gain |
| Content Type | Text |
| Resource Type | Chapter |
