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Investigation of the defect structures in CZ silicon crystals annealed in either oxygen or nitrogen atmosphere
| Content Provider | Scilit |
|---|---|
| Author | Frigeri, C. Ma, M. Irisawa, T. Ogawa, T. |
| Copyright Year | 2018 |
| Description | The defect features in the OSF-ring of CZ Si annealed in either an $O_{2}$ or $N_{2}$ atmosphere were investigated by MC-IR-LST, TEM and EBIC. Though oxygen precipitation still occurs, annealing in $N_{2}$ results in the elimination of the stacking faults very likely due to the introduction of vacancies from the $N_{2}$ atmosphere. Tiny loop-like microdefects are however observed. The EBIC contrast at the oxygen precipitates is detectable at all temperatures in the $O_{2}$ annealed sample but only at low temperatures in the $N_{2}$ annealed one. This suggests a smaller contamination with deep traps in the $N_{2}$ annealed sample. Book Name: Microscopy of Semiconducting Materials 2001 |
| Related Links | https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781351074629-84&type=chapterpdf |
| Ending Page | 402 |
| Page Count | 4 |
| Starting Page | 399 |
| DOI | 10.1201/9781351074629-84 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2018-01-18 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials 2001 Cultural Studies Nitrogen Oxygen Annealed Contamination Defect Smaller Osf Traps Tem |
| Content Type | Text |
| Resource Type | Chapter |
