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Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100)
| Content Provider | Scilit |
|---|---|
| Author | Kvam, E. P. Eaglesham, D. J. Humphreys, C. J. Maher, D. M. Bean, J. C. Eraser, H. L. |
| Copyright Year | 2021 |
| Description | Book Name: Microscopy of Semiconducting Materials, 1987 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 168 |
| Page Count | 4 |
| Starting Page | 165 |
| DOI | 10.1201/9781003069621-27 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-29 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Structure Tem Theoretical Edge Heteroepitaxial Epitaxially Grown Gexsi1 A/2 |
| Content Type | Text |
| Resource Type | Chapter |