NDLI: Molecular Beam Epitaxial Growth of GaN Nanocolumns and Related Nanocolumn Emitters

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Molecular Beam Epitaxial Growth of GaN Nanocolumns and Related Nanocolumn Emitters

Content Provider	Scilit
Author	Kishino, Katsumi Sekiguchi, Hiroto
Copyright Year	2017
Description	This chapter reviews studies on Gallium nitride (GaN)-based nanocolumns performed at Sophia University are systematically. It addresses the first self-organization of nanocolumns, visible-light-emitting InGaN-based nanocolumns, and the nanocrystal effects of such nanocolumns, controlled growth of regularly arranged nanocolumns by molecular beam epitaxy (MBE), and application of GaN nanocolumns to nanocolumn light emitters. GaN nanocolumns, which are one-dimensional nanocrystals with diameters of less than several hundred nanometers, have been self-organized by radio-frequency-plasma-assisted MBE and subsequently extensively studied. Nanocolumn light-emitting diodes consist of a huge number of GaN-based nanocolumns, spontaneously nucleated during their self-organization. A technique for selective-area growth of nanocolumns on GaN templates has been developed to achieve precise control in the size and position of nanocolumns, resulting in uniform arrays of GaN nanocolumns. GaN nanocolumn templates with heights of 150–200 nm were employed to enhance the nucleation of Aluminium GaN nanocrystals on them, which was essential to forming the nanocolumn structure of the Aluminium GaN. Book Name: Novel Compound Semiconductor Nanowires
Related Links	https://api.taylorfrancis.com/content/chapters/edit/download?identifierName=doi&identifierValue=10.1201/9781315364407-2&type=chapterpdf
DOI	10.1201/9781315364407-2
Language	English
Publisher	Informa UK Limited
Publisher Date	2017-10-17
Access Restriction	Open
Subject Keyword	Book Name: Novel Compound Semiconductor Nanowires Gan Nanocolumns Nanocrystals Growth of Nanocolumns On Gan Mbe Aluminium Structure Nucleation Emitters
Content Type	Text
Resource Type	Chapter

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