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Industrial GaN FET technology
| Content Provider | Scilit |
|---|---|
| Author | Blanck, Hervé Thorpe, James R. Behtash, Reza Splettstößer, Jörg Brückner, Peter Heckmann, Sylvain Jung, Helmut Riepe, Klaus Bourgeois, Franck Hosch, Michael Köhn, Dominik Stieglauer, Hermann Floriot, Didier Lambert, Benoît Favede, Laurent Ouarch, Zineb Camiade, Marc |
| Copyright Year | 2010 |
| Description | GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III–V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed. |
| Related Links | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/31B76909704D2DC2ED70B83E5EB00680/S1759078710000073a.pdf/div-class-title-industrial-gan-fet-technology-div.pdf |
| Ending Page | 32 |
| Page Count | 12 |
| Starting Page | 21 |
| ISSN | 17590787 |
| e-ISSN | 17590795 |
| DOI | 10.1017/s1759078710000073 |
| Journal | International Journal of Microwave and Wireless Technologies |
| Issue Number | 1 |
| Volume Number | 2 |
| Language | English |
| Publisher | Cambridge University Press (CUP) |
| Publisher Date | 2010-02-01 |
| Access Restriction | Open |
| Subject Keyword | International Journal of Microwave and Wireless Technologies Nuclear Energy and Engineering Gan Technology |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
