NDLI: Metal oxide semiconductor SERS-active substrates by defect engineering

Content Provider	Royal Society of Chemistry (RSC)
Author	Wu, Hao Wang, Hua Li, Guanghai
Copyright Year	2017
Abstract	A general route to transform metal oxide semiconductors from non-SERS active to SERS-active substrates based on defect engineering is reported. The SERS enhancement factor (EF) of metal oxide semiconductors like α-MoO3 and V2O5 can be greatly enhanced and the SERS performance can be optimized according to the detecting analyte and activating laser wavelength by introducing oxygen vacancy defects. The EF of R6G on α-MoO3−x nanobelts can be as high as 1.8 × 107 with a detection limit of 10−8 M, which is the best among metal oxide semiconductors and comparable to noble metals without a “hot spot”. A model, named “effective electric current model”, was proposed to describe the photo-induced charge transfer process between the absorbed molecules and semiconductor substrates. The EF of 4-MBA, R6G and MB on α-MoO3−x nanobelts with different oxygen vacancy concentrations calculated based on the model matches very well with experimental results. As an extension, some potential metal oxide semiconductor SERS-active substrates were predicted based on the model. Our results clearly demonstrate that, through defect engineering, the metal oxide semiconductors can be made SERS-active substrates with high stability and high biocompatibility.
Starting Page	326
Ending Page	335
Page Count	10
File Format	HTM / HTML PDF
ISSN	00032654
Volume Number	142
Issue Number	2
Journal	The Analyst
DOI	10.1039/c6an01959e
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Analyte Oxygen Semiconductor SERS Laser Biocompatibility Master of Business Administration Electric current Wavelength
Content Type	Text
Resource Type	Article
Subject	Spectroscopy Environmental Chemistry Analytical Chemistry Biochemistry Electrochemistry

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