NDLI: Nanoengineering of an Si/MnGe quantum dot superlattice for high Curie-temperature ferromagnetism

Content Provider	Royal Society of Chemistry (RSC)
Author	Chang, Li-Te Nie, Tianxiao Tang, Jianshi Murata, Koichi Gen, Yin Lee, Shengwei He, Qinglin Wang, Kang L. Fan, Yabin Kou, Xufeng
Copyright Year	2017
Abstract	The realization and application of spintronic devices would be dramatically advanced if room-temperature ferromagnetism could be integrated into semiconductor nanostructures, especially when compatible with mature silicon technology. Herein, we report the observation of such a system – an Si/MnGe superlattice with quantum dots well aligned in the vertical direction successfully grown by molecular beam epitaxy. Such a unique system could take full advantage of the type-II energy band structure of the Si/Ge heterostructure, which could trap the holes inside MnGe QDs, significantly enhancing the hole-mediated ferromagnetism. Magnetic measurements indeed found that the superlattice structure exhibited a Curie temperature of above 400 K. Furthermore, zero-field cooling and field cooling curves could confirm the absence of ferromagnetic compounds, such as Ge8Mn11 (Tc ∼ 270 K) and Ge3Mn5 (Tc ∼ 296 K) in our system. Magnetotransport measurement revealed a clear magnetoresistance transition from negative to positive and a pronounced anomalous Hall effect. Such a unique Si/MnGe superlattice sets a new stage for strengthening ferromagnetism due to the enhanced hole-mediation by quantum confinement, which can be exploited for realizing the room-temperature Ge-based spin field-effect transistors in the future.
Starting Page	3086
Ending Page	3094
Page Count	9
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	9
Issue Number	9
Journal	Nanoscale
DOI	10.1039/c6nr08688h
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Semiconductor Silicon-germanium Electronic band structure Molecular beam epitaxy Ferromagnetism Magnetoresistance Superlattice Quantum tunnelling Spintronics Heterojunction Curie temperature
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures

Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Si/SiGe heterojunction bipolar transistor with graded gap SiGe base made by molecular beam epitaxy

Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

Enhanced photogenerated carrier separation in CdS quantum dot sensitized ZnFe₂O₄/ZnIn₂S₄ nanosheet stereoscopic films for exceptional visible light photocatalytic H₂ evolution performance

Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

Nanoengineering of an Si/MnGe quantum dot superlattice for high Curie-temperature ferromagnetism

Similar Documents

Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures

Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

Si/SiGe heterojunction bipolar transistor with graded gap SiGe base made by molecular beam epitaxy

Transition-metal embedded carbon nitride monolayers: high-temperature ferromagnetism and half-metallicity

Enhanced photogenerated carrier separation in CdS quantum dot sensitized ZnFe2O4/ZnIn2S4 nanosheet stereoscopic films for exceptional visible light photocatalytic H2 evolution performance

Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

Nanoengineering of an Si/MnGe quantum dot superlattice for high Curie-temperature ferromagnetism

Enhanced photogenerated carrier separation in CdS quantum dot sensitized ZnFe₂O₄/ZnIn₂S₄ nanosheet stereoscopic films for exceptional visible light photocatalytic H₂ evolution performance