NDLI: Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics

Content Provider	Royal Society of Chemistry (RSC)
Author	Kim, Jiwon Koh, Weon-Kyu Kim, Dongho Chung, Heejae Cho, Kyung-Sang
Copyright Year	2016
Abstract	Although Group II–VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II–VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III–V QDs have been developed. However, only a few comparative analyses on optical properties of III–V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe–CdS (CdSe/CdS/ZnS), InP–ZnSe (InP/ZnSe/ZnS), and InP–GaP (InP/GaP/ZnS). It was shown that CdSe–CdS QDs have much larger trap densities than InP–shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.
Starting Page	14109
Ending Page	14116
Page Count	8
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	8
Issue Number	29
Journal	Nanoscale
DOI	10.1039/c5nr09291d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Ionization Photoluminescence Valence and conduction bands Band gap Quantum tunnelling Indium phosphide
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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