NDLI: Ex situ vapor phase boron doping of silicon nanowires using BBr<sub>3</sub>

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Nanoscale Vol - 2 Issue - 6

Nanoscale Vol - 2 Issue - 5

Nanoscale Vol - 2 Issue - 4

Nanoscale Vol - 2 Issue - 3

Nanoscale Vol - 2 Issue - 2

Nanoscale Vol -1

Ex situ vapor phase boron doping of silicon nanowires using BBr₃

Content Provider	Royal Society of Chemistry (RSC)
Author	Maboudian, Roya Doerk, Gregory S. Lestari, Gabriella Carraro, Carlo Liu, Fang
Copyright Year	2010
Abstract	An ex situ vapor phase technique for doping vapor–liquid–solid grown silicon nanowires (NWs) based on the reduction of BBr3 by H2 has been demonstrated. Electron microscope images show that the excellent crystal quality of the nanowires is preserved with minimal alteration of their surface morphology. Fano resonance in the Raman spectra for single nanowires indicates that active boron concentrations over two orders of magnitude and as high as 1020 cm−3 are achievable in a well-controlled manner, with excellent axial uniformity. Electrical resistance measurements from single nanowires confirm that incorporated boron is electrically active, and doping of epitaxial bridging Si NWs is successfully demonstrated. By avoiding the pitfalls of nonuniform concentration profiles and drastic morphological changes that often accompany in situ boron doping, this technique provides a valuable alternative doping route for the development of single Si NW devices in a reliable manner.
Starting Page	1165
Ending Page	1170
Page Count	6
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	2
Issue Number	7
Journal	Nanoscale
DOI	10.1039/c0nr00127a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Electron microscope Boron Fano resonance Dopant Electrical resistance and conductance Fano
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

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