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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Ondič, Lukáš Pelant, Ivan Ziegler, Marc Fekete, Ladislav Gilliot, Pierre Gärtnerová, Viera Gallart, Mathieu Hönerlage, Bernd Cibulka, Ondřej Kůsová, Kateřina Herynková, Kateřina Cháb, Vladimír Holý, Václav |
| Copyright Year | 2014 |
| Abstract | Silicon nanocrystals (SiNCs) smaller than 5 nm are a material with strong visible photoluminescence (PL). However, the physical origin of the PL, which, in the case of oxide-passivated SiNCs, is typically composed of a slow-decaying red–orange band (S-band) and of a fast-decaying blue–green band (F-band), is still not fully understood. Here we present a physical interpretation of the F-band origin based on the results of an experimental study, in which we combine temperature (4–296 K), temporally (picosecond resolution) and spectrally resolved luminescence spectroscopy of free-standing oxide-passivated SiNCs. Our complex study shows that the F-band red-shifts only by 35 meV with increasing temperature, which is almost 6 times less than the red-shift of the S-band in a similar temperature range. In addition, the F-band characteristic decay time obtained from a stretched-exponential fit decreases only slightly with increasing temperature. These data strongly suggest that the F-band arises from the core-related quasi-direct radiative recombination governed by slowly thermalizing photoholes. |
| Starting Page | 3837 |
| Ending Page | 3845 |
| Page Count | 9 |
| File Format | HTM / HTML PDF |
| ISSN | 20403364 |
| Volume Number | 6 |
| Issue Number | 7 |
| Journal | Nanoscale |
| DOI | 10.1039/c3nr06454a |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | S band Picosecond Spectroscopy Photoluminescence Luminescence Carrier generation and recombination Redshift |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology |
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