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Materials Horizons Vol - 2 Issue - 2

Materials Horizons Vol - 2 Issue - 1

Materials Horizons Vol -1

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Content Provider	Royal Society of Chemistry (RSC)
Author	Cao, Xianlong Takagiwa, Yoshiki Snyder, G. Jeffrey Wang, Heng
Copyright Year	2015
Abstract	In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped PbSe by studying n-type samples doped with Br, In and Bi. We propose that cation and anion dopants lead to a difference in mobility at high concentrations. This can be understood considering the predominance of cation states to the conduction band and anion states to the valence band. For higher mobility and better performance for most applications of heavily doped semiconductors, dopants should be on the site that is of less influence on the charge-conducting band. This concept can be viewed as an analog of modulation doping on the atomic level. Its physical origin is the random potential due to disorder that perturbs carriers, which is also the origin of Anderson localization at low temperature, a well-studied topic in theoretical physics. In thermoelectric PbSe, the selection of dopant can lead to 10% difference in mobility and in zT.
Starting Page	323
Ending Page	329
Page Count	7
File Format	HTM / HTML PDF
ISSN	20516347
Volume Number	2
Issue Number	3
Journal	Materials Horizons
DOI	10.1039/c5mh00021a
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Thermoelectric effect Extrinsic semiconductor Fermi level Dopant Valence and conduction bands Ion Anderson localization Modulation doping Anderson Physics
Content Type	Text
Resource Type	Article
Subject	Mechanics of Materials Materials Science Electrical and Electronic Engineering Process Chemistry and Technology

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