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Journal of Materials Chemistry C Vol - 3 Issue - 9

Journal of Materials Chemistry C Vol - 3 Issue - 8

Journal of Materials Chemistry C Vol - 3 Issue - 7

Journal of Materials Chemistry C Vol - 3 Issue - 6

Journal of Materials Chemistry C Vol - 3 Issue - 5

Journal of Materials Chemistry C Vol -2

Journal of Materials Chemistry C Vol -1

Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO₂ films during a metal–insulator transition process

Content Provider	Royal Society of Chemistry (RSC)
Author	Deng, Qinglin Zhang, Jinzhong Wu, Jiada Zhang, Peng Hu, Zhigao Chu, Junhao Jiang, Kai You, Qinghu
Copyright Year	2015
Abstract	Optical properties and metal–insulator transition (MIT) of vanadium dioxide (VO2) films grown by pulsed laser deposition with different oxygen pressures (5 to 50 mTorr) have been investigated by temperature dependent transmittance spectra. Three interband critical points (E1, E2 and E3) can be obtained via fitting transmittance spectra and the hysteresis behavior of the center transition energies E1 and E2 is presented. The VO2 film grown at optimized oxygen pressure exhibits the well-defined resistivity drop (∼103 Ω cm) across the MIT process. It is found that the metal–insulator transition temperature (TMIT) increases with the oxygen pressure and the complex dielectric functions are drastically affected by oxygen pressure. It is believed that the oxygen pressure can lead to lattice defects, which introduce the donor level and the acceptor level in the forbidden gap produced by oxygen vacancies and vanadium vacancies, respectively. The donor level provides electrons for higher empty π* bands, which can make the energy barrier lower and decrease critical temperature. On the contrary, electrons jumping from the d∥ band can be recombined by holes on the acceptor, impeding the MIT occurrence. It is claimed that the electronic orbital occupancy is closely related to oxygen pressure, which changes the energy barrier and manipulates the phase transition temperature. The present results are helpful to understand the fundamental mechanism of VO2 films and practical applications for VO2-based optoelectronic devices.
Starting Page	5033
Ending Page	5040
Page Count	8
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	3
Issue Number	19
Journal	Journal of Materials Chemistry C
DOI	10.1039/c5tc00002e
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	MIT Metal\u2013insulator transition Massachusetts Institute of Technology Vanadium(IV) oxide Pulsed laser deposition Oxygen Euclidean space Hysteresis Electrical resistivity and conductivity Dielectric Crystal structure Band gap Vanadium Phase transition Optoelectronics
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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