NDLI: Radiation effects in GaN materials and devices

Please wait, while we are loading the content...

Stabilizing blue phases of a simple cyanobiphenyl compound by addition of achiral mesogen monomer with a branched end group and chiral hydrogen-bonded assemblies

Capsule-embedded reduced graphene oxide: synthesis, mechanism and electrical properties

The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films

Biochemical-to-optical signal transduction by pH sensitive organic–inorganic hybrid Bragg stacks with a full color display

Enhanced transparent-conducting fluorine-doped tin oxide films formed by Aerosol-Assisted Chemical Vapour Deposition

Mechanochemical synthesis of a fluorenone-based metal organic framework with polarized fluorescence: an experimental and computational study

Photoconductivity of nanocrystalline SnO₂ sensitized with colloidal CdSe quantum dots

Ferroelectric liquid crystals induced by dopants with axially chiral 2,2′-spirobiindan-1,1′-dione cores: substituent effect on the polarization power

Engineering polydopamine films with tailored behaviour for next-generation eumelanin-related hybrid devices

Highly ordered TiO₂ nanostructures by sequential vapour infiltration of block copolymer micellar films in an atomic layer deposition reactor

Functionalization of molecular glasses: effect on the glass transition temperature

Back cover

Radiation effects in GaN materials and devices

Content Provider	Royal Society of Chemistry (RSC)
Author	Kim, Jihyun Ren, Fan Pearton, S. J. Frenzer, Patrick Liu, Lu Polyakov, Alexander Y.
Copyright Year	2013
Abstract	This article reviews the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma rays typically produce point defects in GaN, in contrast to neutron damage which is dominated by more extended disordered regions. Regardless of the type of radiation, the electrical conductivity of the GaN is reduced through the introduction of trap states with thermal ionization energies deep in the forbidden bandgap. An important practical parameter is the carrier removal rate for each type of radiation since this determines the dose at which device degradation will occur. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e. it can withstand radiation doses of at least two orders of magnitude higher than those degrading GaAs with a similar doping level. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors and the poor understanding of interaction of radiation defects in doped nitrides with the dislocations always present.
Starting Page	877
Ending Page	887
Page Count	11
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	1
Issue Number	5
Journal	Journal of Materials Chemistry C
DOI	10.1039/c2tc00039c
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	GaN Gallium nitride Electron mobility Neutron Electrical resistivity and conductivity Thermal ionization Band gap Gallium arsenide Dopant Extrinsic semiconductor
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Silicon carbide: barriers to manufacturable devices

An assessment of wide bandgap semiconductors for power devices

Advanced materials and structures for high power wide bandgap devices

GaN microwave electronics

Electrical characterization of GaN based blue light emitting diodes

Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices

Wide band gap electronic devices

GaAs for X-imaging and particle detectors

Thermal resistance calculation of AlGaN-GaN devices

Radiation effects in GaN materials and devices

Similar Documents

Silicon carbide: barriers to manufacturable devices

An assessment of wide bandgap semiconductors for power devices

Advanced materials and structures for high power wide bandgap devices

GaN microwave electronics

Electrical characterization of GaN based blue light emitting diodes

Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices

Wide band gap electronic devices

GaAs for X-imaging and particle detectors

Thermal resistance calculation of AlGaN-GaN devices

Radiation effects in GaN materials and devices