NDLI: Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors

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Journal of Materials Chemistry C Vol - 2 Issue - 5

Journal of Materials Chemistry C Vol -1

Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors

Content Provider	Royal Society of Chemistry (RSC)
Author	Lee, Eungkyu Kim, Kyongjun Lim, Keon-Hee Kim, Joohee Ko, Jieun Kim, Youn Sang Park, Si Yun
Copyright Year	2014
Abstract	Solution-processed high-K dielectrics for oxide thin-film transistors (TFTs) have been widely studied with the objective of achieving high performance and low-cost TFTs for next-generation displays. In this study, we introduce an amorphous hafnium-lanthanum oxide (HfLaOx) gate insulator with high electrical permittivity which was fabricated by the simple spin-coating method. In particular, the solution-processed HfLaOx dielectric layer, which was achieved by a mixture of two Hf and La metal hydroxide precursors, showed amorphous properties, a low leakage current and a high dielectric constant. The solution-processed HfLaOx dielectric layers showed a breakdown voltage as high as 5 MV cm−1 in strength and a dielectric constant above 22. Based on their implementation as a gate insulator, the solution-processed ZnO/HfLaOx TFTs showed good and stable performances during operation at a low voltage. A mobility of μ = 1.6 cm2 V−1 s−1, an on/off current ratio of 106, and a threshold voltage of 0.0015 V were obtained under a 5 V gate bias. Our results show the possibility of the solution-processed amorphous HfLaOx dielectric layer as a gate insulator for oxide TFTs. We believe that this amorphous HfLaOx dielectric has good potential for next-generation high-performance TFT devices.
Starting Page	1050
Ending Page	1056
Page Count	7
File Format	HTM / HTML PDF
ISSN	20507526
Volume Number	2
Issue Number	6
Journal	Journal of Materials Chemistry C
DOI	10.1039/c3tc31727g
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Dielectric Hydroxide Relative permittivity Breakdown voltage Threshold voltage
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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