NDLI: Growth of single-crystalline rutile TiO<sub>2</sub> nanorod arrays on GaN light-emitting diodes with enhanced light extraction

Content Provider	Royal Society of Chemistry (RSC)
Author	Zhou, Weijia Wu, Yongzhong Liu, Xiaoyan Yin, Zhengmao Hao, Xiaopeng Xu, Xiangang
Copyright Year	2012
Abstract	TiO2 is a wide band gap semiconductor with important applications in photovoltaic cells and photocatalysis. In this paper, single-crystalline rutileTiO2 nanorod arrays were fabricated on the GaN based light emitting diodes (LEDs) with a TiO2 seed layer by an acid hydrothermal process. The morphologies and the crystallinity of the rutileTiO2 nanorod arrays on GaN wafer were characterized by scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The optical properties of surface-textured TiO2/GaN were measured and analyzed by photoluminescence. The influence and dependence of the TiO2 nanorod array with the different densities and diameters on the light output of the fabricated GaN wafers were investigated. The light extraction efficiency of GaN LEDs was enhanced by the single-crystalline rutileTiO2 nanorod array, which showed an eight-fold increase in photoluminescence intensity compared to the normal planar surface. The mechanisms for the enhanced light output of GaN LEDs by the single-crystalline rutileTiO2 nanorod arrays were discussed.
Starting Page	3916
Ending Page	3921
Page Count	6
File Format	HTM / HTML PDF
ISSN	09599428
Volume Number	22
Issue Number	9
Journal	Journal of Materials Chemistry
DOI	10.1039/c2jm14369k
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Band gap Semiconductor Solar cell Photocatalysis Gallium nitride Acid Hydrothermal circulation Wafer Scanning electron microscope High-resolution transmission electron microscopy X-ray crystallography Photoluminescence Correlation and dependence
Content Type	Text
Resource Type	Article
Subject	Chemistry Materials Chemistry

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